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| VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -500V RDS(ON) (max) 125 ID(ON) (min) -100mA Order Number / Package TO-92 VP0550N3 Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. BVDSS BVDGS 20V -55C to +150C 300C SGD TO-92 Note: See Package Outline section for dimensions. 1 VP0550 Thermal Characteristics Package TO-92 ID (continuous)* -54mA ID (pulsed) -0.25A Power Dissipation @ TC = 25C 1W jc ja IDR* -54mA IDRM -0.25A C/W 125 C/W 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -500 -2.0 3.5 -4.5 6 -100 -10 -1000 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -100 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 25 -90 -240 85 80 0.85 40 40 10 3 5 8 8 5 -0.8 200 70 20 10 10 10 15 16 -1.5 V ns VGS = 0V, ISD = -0.1A VGS = 0V, ISD = -0.1A ns VDD = -25V ID = -100mA RGEN = 25 pF VGS = 0V, VDS = -25V f = 1 MHz 125 %/C m A mA Typ Max Unit V V mV/C nA Conditions VGS = 0V, ID = -1mA VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -5mA VGS = -10V, ID = -10mA VGS = -10V, ID = -10mA VDS = -25V, ID = -10mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 D.U.T. OUTPUT RL VDD VP0550 Typical Performance Curves Output Characteristics -0.5 -100 Saturation Characteristics VGS = -10V -0.4 VGS = -10V -80 -8V -6V -5V -0.3 ID (milliamps) ID (amperes) -8V -7V -60 -4V -40 -0.2 -6V -0.1 -5V -20 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -8 -10 VDS (volts) Transconductance vs. Drain Current 100 2.0 VDS (volts) Power Dissipation vs. Case Temperature VDS VDS = -25V 80 TA= -55C GFS (millisiemens) PD (watts) 60 TA = 25C TO-92 1.0 40 TA = 150C 20 0 0 -0.05 -0.10 -0.15 -0.20 -0.25 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area -1.0 1.0 TC (C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) -0.1 TO-92(DC) 0.6 0.4 -0.01 0.2 TO-92 P D = 1W T C = 25C -0.001 -1 T C = 25C -10 -100 -1000 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 3 VP0550 Typical Performance Curves BVDSS Variation with Temperature 1.15 200 On-Resistance vs. Drain Current 1.10 160 VGS = -5V BVDSS (normalized) RDS(ON) (ohms) 1.05 120 VGS = -10V 1.00 80 0.95 40 0.90 -50 0 50 100 150 0 0 -0.05 -0.10 -0.15 -0.20 -0.25 Tj (C) Transfer Characteristics -0.4 1.10 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = -25V 1.05 RDS(ON) @ -10V, -10mA 1.6 1.00 1.2 -0.2 TA = 25C 0.95 0.8 TA = 150C 0.90 0.4 V(th) @ -1mA 0 0 -2 -4 -6 -8 -10 0.85 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 80 -10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz -8 60 VDS = -10V C (picofarads) VGS (volts) CISS 40 -6 VDS = -40V 83pF -4 20 30pF COSS CRSS 0 0 -10 -20 -30 -40 -2 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) TA = -55C ID (amperes) |
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